Page 1
Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Features
■
●
High transition frequency fT.
●
Satisfactory linearity of forward current transfer ratio hFE.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
Marking symbol : 2Z
3
Unit: mm
–0
+0.1
0.3
–0.05
+0.1
0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
Conditions
VCE = 20V, IB = 0
IC = 10µA, IE = 0
IE = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 10.7MHz
min
45
35
4
20
typ
50
500
max
10
100
0.5
1.5
Unit
µA
V
V
V
V
MHz
pF
1
Page 2
Transistor 2SC4417
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
80
70
)
60
mA
(
C
50
40
30
20
Collector current I
10
0
0108264
IB=2.0mA
Collector to emitter voltage VCE (V
hFE — I
C
120
FE
100
80
60
40
20
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
VCE=10V
25˚C
–25˚C
Collector current IC (mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
)
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
25˚C
Ta=75˚C
VCB=10V
Ta=25˚C
fT — I
–25˚C
E
Emitter current IE (mA
VCE=10V
)
)
)
pF
(
Cob — V
3.0
2.5
ob
2.0
1.5
1.0
0.5
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
Cre — V
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
1 3 10 30 100
)
Collector to emitter voltage VCE (V
CE
IC=1mA
f=10.7MHz
Ta=25˚C
)
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