Datasheet 2SC4416 Datasheet (HIT)

2SC4416

Silicon NPN Epitaxial

Application

UHF Frequency conversion, Wide band amplifier

Outline

MPAK

3

1

2

1. Base

2. Emitter

3. Collector

2SC4416

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
Collector to emitter saturation

I

V

CBO

CEO

EBO

CE(sat)

voltage
DC current transfer ratio h

FE

Collector output capacitance Cob — 0.85 1.3 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Conversion gain CG 15 19 — dB VCC = 5 V, IC = 0.8 mA,

Noise figure NF — 8 1.2 dB
Note: Marking is “XB–”.

25——V I

— — 0.1 µAVCB = 15 V, IE = 0
——10µAVCB = 13 V, RBE = ∞
— — 0.3 µAVEB = 3 V, IC = 0
— — 0.3 V IC = 20 mA, IB = 4 mA

50 — 180 VCE = 5 V, IC = 5 mA

3.0 3.8 — GHz VCE = 5 V, IC = 20 mA

25 V
13 V
3V
50 mA
150 mW

= 10 µA, IE = 0

C

f

= 900 MHz,

in

f

= 930 MHz (–5dBm),

OSC

f

= 30 MHz

out

2

Maximum Collector Dissipation Curve

150

(mW)

C

2SC4416

DC Current Transfer Ratio vs.

Collector Current

200

FE

VCE = 5 V

160

100

50

Collector Power Dissipation P

0

15010050

Ambient Temperature Ta (°C)

Gain Bandwidth Product vs.

Collector Current

5

VCE = 5 V

4

(GHz)

T

3

2

1

Gain Bandwidth Product f

0

152021050

Collector Current I

(mA)

C

120

80

40

DC Current Transfer Ratio h

0

Collector Current I

(mA)

C

Collector Output Capacitance vs.

Collector to Base Voltage

1.2

(pF)

ob

1.1

IE = 0
f = 1 MHz

1.0

0.9

0.8

Collector Output Capacitance C

0.7
12 1052050

Collector to Base Voltage V

CB

(V)

502010521

3

2SC4416

Conversion Gain and Noise Figure

vs. Supply Voltage

25

20

15

10

5

Conversion Gain CG (dB)

Noise Figure NF (dB)

0

12 510

Supply Voltage V

IC = 0.8 mA
f = 900 MHz

CG

NF

f

= 30 MHz

out

f

= 930 MHz(–5 dBm)

osc

(V)

CC

25

20

Conversion Gain and Noise Figure

25

VCC = 3 V
f = 900 MHz

20

15

10

5

Conversion Gain CG (dB)

Noise Figure NF (dB)

0

0.1 0.2 2 50.5 1.0

Conversion Gain and Noise Figure

vs. Collector Current

VCC = 5 V
f = 900 MHz

CG

vs. Collector Current

f

= 30 MHz

out

f

= 930 MHz(–5 dBm)

osc

Collector Current I

(mA)

C

CG

NF

15

10

5

Conversion Gain CG (dB)

Noise Figure NF (dB)

0

0.1 0.2 2 50.5 1.0
Collector Current I

NF

f

= 30 MHz

out

f

= 930 MHz(–5 dBm)

osc

(mA)

C

4

S Parameters (Emitter Common)

Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP) , ZO = 50 Ω

IC = 5 mA
I

= 10 mA

C

2SC4416

0.2

0

–0.2

S11-Frequency

1

0.8

0.6

0.4

0.2 0.4 0.6 0.8 1 2 3 4 5 10

–0.4

–0.6

–0.8

S12-Frequency

120°

150°

1.5

–1

90°

1.5

–1.5

2

3

4

5

–5

–4

–3

–2

Scale : 0.4/div

60°

10

∞

–10

30°

–180°

0.2

150°

–150°

0.4

120°

–120°

0.6

S21-Frequency

90°

–90°

S22-Frequency

1

0.8

Scale : 2.5/div

60°

30°

0°

–30°

–60°

1.5
2

3

4

5

–180°

–150°

–120°

–90°

–60°

–30°

10

0

0°

–0.2

0.2 0.4 0.6 0.8 1 2 3 4 5 10

–0.4

–0.6

–0.8

–1

1.5

∞

–10

–5

–4

–3

–2

–1.5

5

2SC4416

S Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.777 –47.6 12.318 146.4 0.037 66.8 0.878 –20.1
200 0.636 –82.6 9.212 124.5 0.058 55.3 0.702 –30.7
300 0.540 –107.9 6.901 110.6 0.071 51.0 0.586 –34.8
400 0.494 –125.0 5.480 101.6 0.079 50.7 0.520 –36.4
500 0.468 –138.0 4.547 94.5 0.087 52.0 0.480 –37.2
600 0.452 –147.7 3.859 89.0 0.095 53.7 0.452 –38.4
700 0.439 –155.4 3.374 84.2 0.103 55.7 0.436 –39.9
800 0.437 –162.0 2.982 80.0 0.112 57.5 0.427 –41.3
900 0.428 –167.9 2.691 76.1 0.122 59.6 0.419 –43.4
1000 0.429 –173.8 2.457 72.5 0.131 61.2 0.415 –45.0

Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.627 –64.8 17.938 135.2 0.032 63.2 0.766 –27.4
200 0.492 –102.5 11.621 113.8 0.047 56.4 0.560 –35.3
300 0.432 –125.3 8.190 102.4 0.058 57.2 0.460 –36.1
400 0.411 –139.4 6.332 95.1 0.069 59.6 0.412 –36.2
500 0.395 –150.3 5.168 89.5 0.079 61.7 0.385 –36.2
600 0.394 –157.4 4.350 84.8 0.090 63.7 0.366 –36.8
700 0.392 –163.5 3.784 80.9 0.102 65.2 0.356 –38.3
800 0.390 –168.7 3.333 77.1 0.113 66.5 0.351 –39.7
900 0.388 –173.1 2.995 73.8 0.127 67.3 0.347 –41.6
1000 0.387 –177.0 2.731 70.5 0.138 67.9 0.345 –43.5

6

2SC4416

Y Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 2.182 5.286 149.226 –28.448 –0.004 –0.459 0.069 0.745
200 4.596 9.838 138.489 –53.561 –0.005 –0.941 0.137 1.465
300 8.314 13.395 121.525 –74.164 –0.025 –1.460 0.086 2.251
400 12.329 15.566 103.171 –87.811 –0.044 –1.955 0.111 3.025
500 16.310 16.548 83.990 –97.188 –0.068 –2.451 0.080 3.813
600 19.817 16.562 66.015 –100.594 –0.104 –2.958 0.154 4.618
700 22.727 15.707 49.791 –101.015 –0.136 –3.433 0.226 5.461
800 25.355 14.778 36.105 –98.928 –0.165 –3.943 0.246 6.241
900 27.058 13.073 23.869 –95.428 –0.192 –4.438 0.307 7.067
1000 28.966 11.370 13.481 –92.170 –0.260 –4.944 0.328 7.902

Test Condition VCE = 5 V, IC = 10 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 4.137 6.218 246.938 –82.680 –0.004 –0.462 0.139 0.754
200 7.995 10.306 193.805 –128.092 –0.015 –0.937 0.220 1.578
300 12.296 12.125 140.844 –144.955 –0.027 –1.432 0.322 2.338
400 15.691 12.521 100.830 –145.272 –0.024 –1.913 0.404 3.028
500 18.471 12.026 70.237 –139.959 –0.049 –2.396 0.410 3.817
600 20.418 11.618 48.828 –130.672 –0.032 –2.894 0.492 4.460
700 21.855 10.887 33.158 –121.649 –0.024 –3.394 0.474 5.196
800 23.059 10.127 20.494 –112.454 –0.017 –3.889 0.502 5.950
900 23.687 9.375 11.528 –103.839 –0.013 –4.418 0.446 6.699
1000 24.366 8.807 4.277 –96.921 –0.013 –4.905 0.471 7.486

7

2SC4416

,

Conversion Gain and Noise Figure Test Circuit

f

= 930 MHz

osc

(–5 dBm)

D

1

D1 : 1SV188

L

1

L

3

f

= 900 MHz

in

Tin

V

BB

V

1 k 2.2 n

2.2 n

L

2

8 p

100

47 p

1 k

2.2 n

D

1

2.2 n

25

47 k

2.2 n

V

Tout

V

CC

220 µ

100 p

100 p

f

= 30 MHz

out

R

= 50 Ω

L

Unit R :

C :
L :

Ω

F

H

: φ1 mm Enameled Copper Wire.

L

1

10

10

10

L

: φ1 mm Enameled Copper Wire.

2

25

10

15

30

: φ1 mm Enameled Copper Wire.

L

3

L

: Inside Dia 3 mm, φ0.5 mm Enameled Copper Wire 1 Turn.

4

10

10

Unit : mm

L5 : Inside Dia 5 mm Bobin, φ0.2 mm Enameled Copper Wire 20 Turns Using Ferrite Core.

8

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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