Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4387
DESCRIPTION ·
·With TO-3PML package
·Complement to type 2SA1672
APPLICATIONS
·Audio and general purpose
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 4 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 140 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4387
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
hFE DC current gai n IC=3A ; VCE=4V 50 180
fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz
Collector-emitter breakdown voltage IC=50mA; IB=0 140 V
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V
Collector cut-off current VCB=200V; IE=0 10
Emitter cut-off current VEB=6V; IC=0 10
μA
μA
h
classifications
FE
O P Y
50-100 70-140 90-180
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4387
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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