Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4371
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ I
APPLICATIONS
·Switching regulator application
·High voltage switching application
·High Speed DC-DC converter application
·Fluorescent light ballastor application
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 400(Min)
= 4A
C
℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 7 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
a
Collector Power Dissipation
@TC=25℃
Junction Temperature 150 ℃
2
W
30
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4371
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching times
t
r
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V
Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Collector Cutoff Current VCB= 400V; IE= 0 100 μA
Emitter Cutoff Current VEB= 7V; IC= 0 1 mA
DC Current Gain IC= 3A ; VCE= 5V 12
DC Gurrent Gain IC= 5A ; VCE= 5V 8
Rise Time 1.0 μs
Storage Time 2.5 μs
= -IB2= 0.4A; VCC≈200V
I
B1
RL= 50Ω;PW=20μs Duty≤1%
t
f
Fall Time
1.0 μs
isc Website：www.iscsemi.cn
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