Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4370
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
V
= 160V(Min)
CEO
·Complement to Type 2SA1659
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
V
V
I
C(DC)
I
B(DC)
P
T
T
CBO
CEO
EBO
C
J
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 5.0 V
Collector Current(DC) 1.5 A
Base Current 0.15 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -55~150
20 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4370
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBO
I
EBO
h
C
(sat)
(on)
FE
OB
f
T
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 160 V
Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V
Base-Emitter On Voltage IC= 500mA ; VCE= 5V 1.0 V
Collector Cutoff Current VCB= 160V ; IE= 0 1.0 μA
Emitter Cutoff Current VEB= 5V; IC=0 1.0 μA
DC Current Gain IC= 100mA ; VCE= 5V 70 240
Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 25 pF
Current-Gain—Bandwidth Product IC= 100m A ; VCE= 10V 100 MHz
hFE Classifications
O Y
70-140 120-240
isc Website：www.iscsemi.cn
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