Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4369
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1658
·Good linearity of h
APPLICATIONS
·For general purpose applications
PINNING
PIN DESCRIPTION
FE
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
IB Base current 0.3 A
Collector-base voltage Open emitter 30 V
Collector-emitter voltage Open base 30 V
Emitter-base voltage Open collector 5 V
T
PC Collector dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
15 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4369
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz
h
FE-1
Collector-emitter breakdown voltage IC=10mA ; IB=0 30 V
Collector-emitter saturation voltage IC=2A ;IB=0.2A 0.8 V
Collector cut-off current VCB=20V; IE=0 1.0
Emitter cut-off current VEB=5V; IC=0 1.0
DC current gain IC=0.5A ; VCE=2V 70 240
DC current gain IC=2.5A ; VCE=2V 25
μA
μA
Classifications
O Y
70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4369
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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