Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4368
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V
= 150V(Min)
CEO
·Complement to Type 2SA1657
APPLICATIONS
·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5.0 V
Collector Current-Continuous 1.5 A
B Base Current-Continuous 0.5 A
Collector Power Dissipation
= 25℃
@T
C
Collector Power Dissipation
= 25℃
@T
a
Junction Temperature 150
Storage Temperature -55~150
20
2
W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4368
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
I
CBO
I
EBO
h
C
(sat)
FE
OB
f
T
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V
Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V
Collector Cutoff Current VCB= 120V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 500mA; VCE= 10V 40 140
Collector Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 35 pF
Current-Gain—Bandwidth Product IC= 500m A; VCE= 10V 4 MHz
isc Website：www.iscsemi.cn
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