Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4350
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For high speed power switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 0.5 A
PC Collector power dissipation TC=25℃ 40 W
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4350
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=5A ; VCE=2V 2000 20000
Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V
Collector-base breakdown voltage IC=1mA; IE=0; 100 V
Emitter-base breakdown voltage IE=5mA; IC=0; 7 V
Collector-emitter saturation voltage IC=5A; IB=5mA 1.5 V
Base-emitter saturation voltage IC=5A; IB=5mA 2.0 V
Collector cut-off current VCB=100V ;IE=0 1
Emitter cut-off current VEB=7V; IC=0 5.0 mA
μA
hFE classifications
M L K
2000-5000 4000-10000 8000-20000
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4350
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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