Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4336
DESCRIPTION
·With TO-220Fa package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·For use in switching power supplies ,DC/DC
converters,motor drivers,solenoid drivers,etc
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings (Ta=25℃)
Fig.1 simplified outline (TO-220Fa) and symbol
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
ICM Collector current-Peak 20 A
IB Base current(DC) 6 A
PT Total power dissipation
Tj
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
TC=25℃
T
=25℃
a
Junction temperature 150
Storage temperature -55~150
30
2
w
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4336
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter sustaining voltage IC=5.0A , IB=0.6A;L=1mH 100 V
Collector-emitter saturation voltage IC=6A ;IB=0.3A 0.3 V
Collector-emitter saturation voltage IC=8A ;IB=0.4A 0.5 V
Base-emitter saturation voltage IC=6A ;IB=0.3A 1.2 V
Base-emitter saturation voltage IC=8A ;IB=0.4A 1.5 V
Collector cut-off current VCB=100V; IE=0 10
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 10
DC current gain IC=1A ; VCE=2V 100
DC current gain IC=2A ; VCE=2V 100 400
DC current gain IC=6A ; VCE=2V 60
VCE=100V; V
T
=125℃
a
BE
(off)
=-1.5V
10
1.0
μA
μA
mA
μA
COB Collector capacitance IE=0; VCB=10V; f=1MHz 120 pF
fT Transition frequency IC=0.5A; VCE=10V 150 MHz
Switching times
ton
ts
tf
h
Turn-on time 0.3
Storage time 1.5
Fall time
Classifications
FE-2
M L N
100-200 150-300 200-400
2
IC=6A ;IB1=-IB2=0.3A
VCC≈50V;RL=8.3Ω
μs
μs
0.3
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4336
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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