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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4330
DESCRIPTION
·Low Collector Saturation Voltage
: V
CE(sat)
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@ IC= 8A
= 100V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current-Continuous 5 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
40 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4330
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
CE(
V
BE(
V
BE(
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
sat
sat
sat
sat
Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH 100 V
Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 0.3 V
)-1
Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A B 0.5 V
)-2
Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 1.2 V
)-1
Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A B 1.5 V
)-2
Collector Cutoff Current VCB= 150V; IE= 0 10
= 100V; VBE= -1.5V
V
Collector Cutoff Current
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 1A ; VCE= 2V 100
DC Current Gain IC= 2A ; VCE= 2V 100 200 400
CE
V
= 100V; VBE= -1.5V;Ta=125℃
CE
10
1.0
μA
μA
mA
μA
h
FE-3
DC Current Gain IC= 6A ; VCE= 2V 60
h
classifications
FE-2
M L K
100-200 150-300 200-400
isc Website：www.iscsemi.cn
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