Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4327
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Low Collector Saturation Voltage: V
·Complement to Type 2SA1643
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 35V(Min)
(BR)CEO
= 0.5V(Max)@ (IC= 5A, IB= 0.3A) B
CE(sat)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage 50 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
25 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4327
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
V
(BR)CEO
(BR)EBO
CE
(sat)
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 35 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.3A B 0.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.3A B 1.2 V
Collector Cutoff Current VCB= 50V; IE= 0 10
Emitter Cutoff Current VEB= 7V; IC= 0 10
DC Current Gain IC= 5A; VCE= 2V 50
Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 115 MHz
μA
μA
isc Website：www.iscsemi.cn
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