Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4303
DESCRIPTION
·With TO-3PML package
·High voltage switchihg transistor
APPLICATIONS
·Switching Regulator,
·Lighting Inverter and general purpose
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector power dissipation TC=25℃ 80 W
Collector-base voltage Open emitter 1400 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4303
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=2.5A ; VCE=4V 6
fT Transition frequency IE=0.5A ; VCE=12V 4 MHz
Collector-emitter breakdown voltage IC=10mA; IB=0 800 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage IC=2.5A;IB=0.5A 1.0 V
Base-emitter saturation voltage IC=2.5A;IB=0.5A 1.5 V
Collector cut-off current VCB=1200V; IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4303
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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