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固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4278
DESCRIPTION ·
·With TO-247 package
·Complement to type 2SA1633
·High current and high power capability
APPLICATIONS
·For audio output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 10 A
PD Total power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4278
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 60 320
fT Transition frequency IC=1A ; VCE=10V 20 MHz
Collector-emitter breakdown voltage IC=25mA; IB=0 150 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V
Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V
Collector cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
h
Classifications
FE
D E F
60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4278
PACKAGE OUTLINE
3
Fig.2 Outline dimensions
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