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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4276
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·Low collector saturation voltage
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 5 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 10 V
T
=25℃
C
80 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 1.56
th j-C
℃/W
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4276
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=0.2A ;IB=0 400 V
Collector-base breakdown voltage IC=1mA ;IE=0 500 V
Emitter-base breakdown voltage IE=1mA ;IC=0 10 V
Collector-emitter saturation voltage IC=6A; IB=1.2A 0.8 V
Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V
Collector cut-off current VCB=450V; IE=0 100 μA
Emitter cut-off current VEB=10V; IC=0 100 μA
hFE DC current gai n IC=2A ; VCE=5V 25 65
Switching times
ton Turn-on time 1.0 μs
=7.5A;RL=20Ω
I
C
=0.75A; IB2=-1.5A
ts Storage time 2.5 μs
I
B1
Pw = 20μs; Duty≤2%
tf Fall time
2
0.5 μs
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4276
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4276
4
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