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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4274
DESCRIPTION ·
·With TO-220C package
·High voltage,high speed
·Low saturation voltage
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 3 A
PC Collector dissipation 40 W
Tj Junction temperature 150
T
stg
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 10 V
Storage temperature -55~150
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 3.0 ℃/W
th j-C
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4274
CHARACTERISTICS
Tj=25℃ unless otherwise specifie
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-base breakdown voltage IC=1mA ; IE=0 500 V
Collector-emitter breakdown voltage IC=0.2A ; IB=0 400 V
Emitter-base breakdown voltage IE=1mA ; IC=0 10 V
Collector-emitter saturation voltage IC=4A; IB=0.8A 0.8 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V
Collector cut-off current VCB=450V ;IE=0 100
Emitter cut-off current VEB=10V; IC=0 100
μA
μA
hFE DC current gai n IC=1A ; VCE=5V 25 55
Switching times
ton Turn-on time 1.0
=200V; IC=5A
V
CC
I
t
Storage time 2.5
stg
=0.5A;IB2=-1A;
B1
μs
μs
RL=30Ω
tf Fall time
0.5
μs
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4274
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4274
4
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