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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4205
DESCRIPTION ·
·With TO-220C package
·High voltage ;high speed
APPLICATIONS
·For use in high voltage and power
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PC Collector dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 400 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4205
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
I
CBO
I
EBO
hFE DC current gai n IC=3A ; VCE=5V 16 50
fT Transition frequency IC=0.5A ; VCE=10V 15 MHz
Collector-emitter breakdown voltage IC=10mA; IB=0 400 V
Collector-base breakdown voltage IC=1mA; IE=0 400 V
Emitter-base breakdown voltage IE=1mA; IC=0 7 V
Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V
Collector cut-off current VCB=400V ; IE=0 10 μA
Emitter cut-off current VCE=7V ; IB=0 10 μA
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4205
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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