Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4157
DESCRIPTION
·With TO-3P(I) package
·High V
·High speed switching
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN DESCRIPTION
CEO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-DC 10 A
ICM Collector current-peak 20 A
IB Base current 5 A
Collector-base voltage Open emitter 600 V
Collector-emitter voltage Open base 450 V
Emitter-base voltage Open collector 8 V
T
PT Total power dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
100 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Switching times
Collector-emitter breakdown voltage IC=10mA ,IB=0 450 V
(BR)CEO
Collector-base breakdown voltage IC=1mA ,IE=0 600 V
(BR)CBO
V
Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=5A; IB=1A 2.0 V
BEsat
I
Collector cut-off current VCB=500V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=8V; IC=0 1.0 mA
EBO
hFE DC current gain IC=5A ; VCE=5V 15
tr
t
stg
Rise time 0.5 μs
≈200V
V
Storage time 2.5 μs
CC
IB1=-IB2=0.5A ; RL=40Ω
tf
Fall time
0.5 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4157
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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