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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4111
DESCRIPTION
·With TO-3PL package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output application
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 22 A
IB Base current 3.5 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
PC Collector power dissipation
T
=25℃
C
Tj Junction temperature 150
T
Storage temperature -55~150
stg
3.5
150
W
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4111
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
Eemitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturatio n voltage IC=7A ;IB=2.5A 5.0 V
Base-emitter saturation voltage IC=7A ;IB=2.5A 1.5 V
μA
Collector cut-off current
VCB=750V; IE=0 10
=1500V; IE=0
V
CB
1 mA
DC current gain IC=1A ; VCE=5V 5
DC current gain IC=7A ; VCE=5V 3 8
fT Transition frequency IC=1A ; VCE=10V;f=0.5MHz 2 MHz
Switching times
ts
tf
Storage time 12
I
=6A ;IB1=-IB2=1.7A
C
=5μH
L
Fall time
Leak
0.6
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4111
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4111
4
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