Page 1
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987©
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
•S
21e
2
= 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
10 V
Emitter to Base Voltage V
EBO
1.5 V
Collector Current I
C
65 mA
Total Power Dissipation P
T
200 mW
Junction Temperature T
j
150
C
Storage Temperature T
stg
65 to +150C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current I
EBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain h
FE
50 250 VCE = 8V, IC = 20 mA
Gain Bandwidth Product f
T
9 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Feed-Back Capacitance C
re
0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S
21e
2
13 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.2 2.0 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz
hFE Classification
Class R36/RCF * R37/RCG * R38/RCH *
Marking R36 R37 R38
h
FE
50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5° 5°
5° 5°
0 to 0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.950.85
1.1
+0.2
−0.1
0.16
+0.1
−0.06
0.4
4
1
3
2
+0.1
−0.05
2.8
+0.2
−0.3
1.5
+0.2
−0.1
0.6
+0.1
−0.05
0.4
+0.1
−0.05
0.4
+0.1
−0.05
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2
2SC4094
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWE R DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
200
100
0
50
100
150
T
A
-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-DC Current Gain
IC-Collector Current-mA
GAIN BANDWIDTH PRODUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-GHz
0.5 1 5 10 50
32571020301
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
|S
21e
|
2
-Insertion Gain -dB
MAG-Maximum Available Gain-dB
IC-Collector Current-mA
f-Frequency-GHz
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
VCB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
2.0
1.0
0.1
0.2
0.3
0.5
0.7
123571020
12 5102040
I
C
-Collector Current-mA
MAG
|S
21e
|
2
f = 1.0 GHz
VCE = 8 V
f = 1.0 GHz
VCE = 8 V
I
C
= 20 mA
0.1 0.2 0.5 1.0 2.0
VCE = 8 V
VCE = 8 V
30
10
7
5
3
2
20
30
20
10
0
20
10
0
200
100
10
20
50
Free air
Page 3
3
2SC4094
0.5 1 5 10 50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
7
6
5
4
3
2
1
0
VCE = 8 V
f = 1.0 GHz
S-PARAMETER
VCE = 8.0 V, IC = 5.0 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.774
0.631
0.523
0.460
0.426
0.416
0.417
0.430
0.443
0.458
47.8
88.8
120.9
145.1
166.6
178.2
163.0
152.1
142.1
136.5
12.689
9.952
7.813
5.966
4.841
4.065
3.413
3.035
2.659
2.482
146.5
119.4
100.9
87.6
76.7
68.8
60.7
54.1
48.0
44.3
0.031
0.048
0.058
0.067
0.074
0.083
0.087
0.098
0.105
0.114
65.4
53.4
46.2
43.9
43.8
43.5
41.2
42.8
40.1
43.0
0.882
0.723
0.611
0.564
0.515
0.488
0.459
0.443
0.428
0.414
19.1
29.5
33.4
34.5
37.6
39.6
44.1
45.9
51.1
53.5
VCE = 8.0 V, IC = 20.0 mA, ZO = 50
f (MHz)
S
11
S
11
S
21
S
21
S
12
S
12
S
22
S
22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.461
0.364
0.338
0.330
0.334
0.344
0.359
0.383
0.401
0.419
89.8
135.8
163.4
177.9
163.2
153.9
143.1
136.1
128.3
124.7
23.331
13.501
9.535
7.083
5.604
4.722
3.982
3.517
3.094
2.882
121.6
99.2
86.4
77.5
69.3
63.5
56.8
51.1
45.6
42.7
0.021
0.033
0.046
0.056
0.070
0.084
0.091
0.104
0.116
0.127
60.7
61.2
61.5
62.1
60.0
60.4
54.9
54.5
49.9
50.8
0.665
0.511
0.448
0.430
0.402
0.385
0.362
0.350
0.337
0.323
27.7
30.5
29.5
29.5
32.5
34.8
39.5
42.1
47.4
50.5
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4
2SC4094
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−
160
−
150
−
140
−
130
−
120
−
110
−
100
−
90
−
80
−
70
−
60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
A
T
IVE
R
E
A
C
T
A
N
C
E
C
OM
P
O
N
E
N
T
P
OS
I
T
I
V
E
R
E
A
C
T
A
N
C
E
CO
M
P
O
N
E
N
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
40 8 12 16 20
S
21e
2GHz
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.040 0.08 0.12 0.16 0.2
S
12e
CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
S
12e
-FREQUENCY
CONDITION V
CE
= 8 V
I
C
= 20/5 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
0.2 GHz
0.2 GHz
2 GHz
2 GHz
IC = 5 mA
IC = 5 mA
IC = 20 mA
IC = 20 mA
IC = 5 mA
IC = 5 mA
S
11e
S
22e
IC = 20 mA
IC = 20 mA
0.2 GHz
0.2 GHz
2GHz
Page 5
5
2SC4094
[MEMO]
Page 6
6
2SC4094
[MEMO]
Page 7
7
2SC4094
[MEMO]
Page 8
2SC4094
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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