Page 1
SHINDENGEN
Switching Power Transistor
2SC4060
(T20W45FX)
20A NPN
FX Series
OUTLINE DIMENSIONS
Case : MTO-3P
Unit : mm
RATINGS
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
T
VEB = 5V
Tc = 25℃
600 V
450 V
600
7V
20 A
40
7
14
150
TOR 0.8
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
Conditions
IC = 0.2A
At rated Voltage
At rated Voltage
V
= 5V, IC = 10A
CE
V
= 5V, IC = 1mA
CE
IC = 10A
IB = 2A
Junction to case
V
= 10V, IC = 2A
CE
IC = 10A
IB1 = 2A, IB2 = 4A
RL = 15Ω , V
BB2
= 4V
Ratings Unit
Min 450 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 10
Min 5
Max 1.0 V
Max 1.5 V
Max 0.83 ℃/W
STD 20 MHz
Max 0.5
Max 2.0 μs
Max 0.2
A
W
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
C
- I
FE
h
= 5V
CE
V
40
[A]
C
2SC4060
Tc = 150°C
100
100°C
FE
50°C
25°C
0°C
10
−25°C
−55°C
DC Current Gain h
Collector Current I
1
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
30A
1
20A
10A
0.5
0
14
[A]
B
2SC4060
= 1A 2A 5A 10A 20A 30A
C
I
3
2.5
CE
[V]
5A
Base Current I
2A
= 1A
C
I
Tc = 25°C
0.01 0.1 1 10
2
1.5
1
0.5
0
Collector-Emitter Voltage V
Page 4
[µs]
SW
2SC4060
t
s
1
t
on
Switching Time - I
C
0.1
Switching Time t
0.01
0 5 10 15 20
t
f
Collector Current IC [A]
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 150V
Tc = 25°C
C
C
= 4V
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[µs]
SW
2SC4060
1
Switching Time - V
t
s
t
on
CC
0.1
Switching Time t
0.01
0 50 100 150 200 250 300
t
f
Collector Voltage VCC [V]
IC = 10A
IB1 = 2A
IB2 = 4A
V
= 4V
BB2
Tc = 25°C
Page 6
[µs]
SW
2SC4060
1
Switching Time - Tc
t
s
t
on
0.1
Switching Time t
0.01
0 50 100 150
t
f
IC = 10A
IB1 = 2A
IB2 = 4A
V
R
Case Temperature Tc [°C]
BB2
= 15Ω
L
= 4V
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[µs]
SW
2SC4060
L-Load Switching Time - I
t
s
C
1
0.1
Switching Time t
0.01
0 5 10 15 20
IB1 = 0.2I
IB2 = 0.4I
V
V
Tc = 25°C
tf + t
vs
t
f
Collector Current IC [A]
= 4V
BB2
CE (clamp)
C
C
= 300V
Page 8
2SC4060
1
[µs]
SW
L-Load Switching Time - IC (At High Temperature)
t
s
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 100°C
C
C
= 4V
= 300V
0.1
Switching Time t
0.01
0 5 10 15 20
tf + t
vs
t
f
Collector Current IC [A]
Page 9
6
10
5
10
4
10
Transient Thermal Impedance
2SC4060
10
1
0.1
0.01
Time t [µs]
3
10
2
10
Transient Thermal Impedance θjc(t) [°C/W]
0.001
Page 10
40
2SC4060
DC
Forward Bias SOA
1ms10ms
150µs
50µs
10
[A]
C
1
Collector Current I
0.1
PT limit
I
S/B
limit
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
450
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100
80
60
2SC4060 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 12
40
35
30
25
[A]
C
20
2SC4060
Reverse Bias SOA
15
Collector Current I
10
5
0
IB1 = 0.3I
IB2 = 4A
V
BB2
Tc < 150°C
0 100 200 300 400 500 600
C
= 5V
Collector-Emitter Voltage VCE [V]
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