Page 1
SHINDENGEN
Switching Power Transistor
2SC4057
(T8W45FX)
8A NPN
FX Series
OUTLINE DIMENSIONS
Case : MTO-3P
Unit : mm
RATINGS
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
T
VEB = 5V
Tc = 25℃
600 V
450 V
600
7V
8A
16
4
8
80
TOR 0.8
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
Conditions
IC = 0.2A
At rated Voltage
At rated Voltage
V
= 5V, IC = 4A
CE
V
= 5V, IC = 1mA
CE
IC = 4A
IB = 0.8A
Junction to case
V
= 10V, IC = 0.8A
CE
IC = 4A
IB1 = 0.8A, IB2 = 1.6A
RL = 37.5Ω, V
BB2
= 4V
Ratings Unit
Min 450 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 10
Min 5
Max 1.0 V
Max 1.5 V
Max 1.56 ℃/W
STD 20 MHz
Max 0.5
Max 2.0 μs
Max 0.2
A
W
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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C
- I
FE
h
= 5V
CE
V
16
[A]
C
2SC4057
100
Tc = 150°C
FE
100°C
50°C
25°C
0°C
10
−25°C
−55°C
DC Current Gain h
Collector Current I
1
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
16A
1
8A
4A
0.5
0
8
[A]
B
2SC4057
= 1A 2A 4A 8A 16A
C
I
3
2.5
CE
[V]
2A
= 1A
C
I
Tc = 25°C
0.01 0.1 1
2
1.5
1
0.5
0
Base Current I
Collector-Emitter Voltage V
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2SC4057
1
Switching Time - I
t
s
C
[µs]
SW
0.1
Switching Time t
t
on
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 150V
Tc = 25°C
C
C
= 4V
0.01
0 1 2 3 4 5 6 7 8
Collector Current IC [A]
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[µs]
SW
2SC4057
1
Switching Time - V
t
s
t
on
CC
0.1
Switching Time t
0.01
0 50 100 150 200 250 300
t
f
Collector Voltage VCC [V]
IC = 4A
IB1 = 0.8A
IB2 = 1.6A
V
= 4V
BB2
Tc = 25°C
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[µs]
SW
2SC4057
1
Switching Time - Tc
t
s
t
on
0.1
Switching Time t
0.01
0 50 100 150
t
f
IC = 4A
IB1 = 0.8A
IB2 = 1.6A
V
R
Case Temperature Tc [°C]
= 4V
BB2
= 37.5Ω
L
Page 7
[µs]
SW
2SC4057
L-Load Switching Time - I
t
s
C
1
0.1
Switching Time t
0.01
0 1 2 3 4 5 6 7 8
tf + t
vs
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 25°C
Collector Current IC [A]
C
C
= 4V
= 300V
Page 8
2SC4057
1
[µs]
SW
L-Load Switching Time - IC (At High Temperature)
t
s
0.1
Switching Time t
0.01
0 1 2 3 4 5 6 7 8
tf + t
vs
t
f
IB1 = 0.2I
IB2 = 0.4I
V
V
Tc = 100°C
Collector Current IC [A]
= 4V
BB2
CE (clamp)
C
C
= 300V
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1
10
0
10
-1
10
Transient Thermal Impedance
2SC4057
10
1
0.1
-2
Time t [s]
10
-3
10
-4
10
-5
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 10
16
10
[A]
C
2SC4057
10ms
DC
1
Forward Bias SOA
150µs1ms
50µs
Collector Current I
0.1
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
450
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100
80
60
2SC4057 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 12
16
14
12
10
[A]
C
2SC4057
8
Reverse Bias SOA
6
Collector Current I
4
IB1 = 0.3I
IB2 = 2.4A
2
0
0 100 200 300 400 500 600
V
= 5V
BB2
Tc < 150°C
Collector-Emitter Voltage VCE [V]
C
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