Page 1
Application
High voltage amplifier
Outline
TO-126 MOD
2SC4046
Silicon NPN Epitaxial
1. Emitter
2. Collector
1
2
3
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
CBO
CEO
EBO
C
1
120 V
120 V
5V
0.2 A
8W
Page 2
2SC4046
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 3.5 — pF VCB = 30 V, f = 1 MHz, IE = 0
Note: 1. The 2SC4046 is grouped by hFE as follows.
Grade D E
h
FE
250 to 500 400 to 800
120 — — V IC = 10 µA, IE = 0
120 — — V IC = 1 mA, RBE = ∞
5——VI
= 10 µA, IC = 0
E
——10µAVCB = 80 V, IE = 0
1
250 — 800 VCE = 5 V, IC = 10 mA
— — 1.0 V
— — 1.0 V IC = 200 mA, IB = 20 mA
— 350 — MHz VCE = 10 V, IC = 50 mA
Maximum Collector Dissipation Curve
12
10
8
6
4
2
Collector power dissipation Pc (W)
0 50 150100
Case Temperature T
C
(°C)
Area of Safe Operation
1.0
Single Pulse
Ta = 25°C
(A)
C
DC Operation
= 25°C
T
C
0.1
Collector Current I
0.01
1 10 100 1,000
Collector to emitter Voltage V
PW = 1 ms
(25 V, 0.4 A)
(80 V, 0.125 A)
(80 V, 0.1 A)
(120 V, 0.055 A)
(120 V, 0.05 A)
CE
(V)
2
Page 3
100
80
(mA)
C
60
Typical Output Characteristics
120
100
80
1,000
FE
100
2SC4046
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
25–25
40
20
Collector Current I
0
4 8 12 18
Collector to emitter Voltage V
Base to Emitter Voltage
10
(V)
1.0
BE
V
Base to emitter voltage
25
0.1
1 10 100 1,000
Collector current I
60
40
20 µA
IB = 0
vs. Collector Current
VCE = 10 V
Pulse Test
Ta = –25°C
75
(mA)
C
CE
(V)
20
10
DC current transfer ratio h
VCE = 10 V
Pulse Test
1 10 100 1,000
Collector current I
(mA)
C
Collector to Emitter Saturation
Voltage vs. Collector Current
10
IC/IB = 10
Pulse Test
1.0
(V)
CE (sat)
V
0.1
Ta = 75°C
25
–25
Collector to emitter saturation voltage
0.01
1 10 100 1,000
Collector current I
(mA)
C
3
Page 4
2SC4046
Gain Bandwidth Product vs.
Collector Current
1,000
(MHz)
T
V
CE
= 20 V
100
Pulse Test
10
Gain bandwidth product f
1
1 2 5 10 20 50 100
Collector current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
100
(pF)
50
ob
5
10
20
10
f = 1 MHz
I
= 0
E
5
2
Collector output capacitance C
1
1 2 5 10 20 50 100
Collector to base voltage V
CB
(V)
4
Page 5
Unit: mm
2.3 ± 0.3
0.8
2.29 ± 0.5
8.0 ± 0.5
120°
120°
φ
120°
3.7 ± 0.7
1.1
2.29 ± 0.5
3.1
11.0 ± 0.5
15.6 ± 0.5
+0.15
–0.1
0.55
2.7 ± 0.4
1.2
Hitachi Code
JEDEC
EIAJ
(reference value)
Weight
TO-126 Mod
—
—
0.67 g
Page 6
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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