Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4026
DESCRIPTION ·
·With TO-220Fa package
·High breakdown voltage
·High speed switching
·Wide area of safe operation (SOA)
APPLICATIONS
·For high breakdown voltage high-speed
switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 10 A
IB Base current 1.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
TC=25℃
T
=25℃
a
35
W
2
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4026
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 5 MHz
Switching times
ton
ts
Collector-emitter breakdown voltage IC=10mA , IB=0 400 V
Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.0 V
Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V
Collector cut-off current VCB=500V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=2A ; VCE=5V 8
Turn-on time 0.7
I
=2A ;IB1=0.4A;IB2=-0.8A
Storage time 2.0
C
V
CC
=150V
μA
μA
μs
μs
tf
Fall time
2
0.3
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4026
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC4026
4
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