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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4007
DESCRIPTION
·Low Collector Saturation Voltage
: V
·Collector-Emitter Breakdown Voltage-
: V
·Wide Area of Safe Operation
·Complement to Type 2SA1634
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
= 1.0V(Max)@ IC= 2A
CE(sat)
= 80V (Min)
(BR)CEO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 4 A
Collector Current-Peak 6 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150
40
W
2
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4007
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
f
C
h
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.5 V
)
sat
Collector Cutoff Current VCB= 100V; IE= 0 10 μA
Emitter Cutoff Current VEB= 6V; IC= 0 10 μA
DC Current Gain IC= 1A ; VCE= 4V 100 500
T
OB
Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 10 MHz
Output Capacitance
classifications
FE
I
=0 ; VCB= 10V; f
E
= 1MHz
test
60 pF
E F G
100-200 160-320 250-500
isc Website：www.iscsemi.cn
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