Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3973B
DESCRIPTION ·
·With TO-220Fa package
·High voltage,high speed
·Wide area of safe operation
APPLICATIONS
·For high voltage,high speed switching
applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current-Peak
IB Base current (DC) 4 A
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 8 V
℃)
15 A
Ta=25℃
PC Collector power dissipation
TC=25℃
Tj Maximum operating junction temperature 150
T
Storage temperature -55~150
stg
2
W
45
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3973B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA ; IB=0 500 V
Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCB=1000V; IE=0 100 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=4A ; VCE=5V 8
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3973B
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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