Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3972 2SC3972A
DESCRIPTION
·With TO-220Fa package
·High speed switching
·High V
·Wide area of safe operation
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN DESCRIPTION
·
CBO
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICM Collector current-Peak 10 A
IB Base current 3 A
Collector-base voltage
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 8 V
℃)
2SC3972 800
2SC3972A
Open emitter
900
V
TC=25℃ 40
PC Collector power dissipation
=25℃
T
a
Tj
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
W
2
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3972 2SC3972A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 20 MHz
Switching times
Collector-emitter breakdown voltage IC=10mA , IB=0 500 V
Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V
Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V
Collector
cut-off current
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=2A ; VCE=5V 8
2SC3972 VCB=800V; IE=0
2SC3972A V
=900V; IE=0
CB
0.1 mA
ton
ts
tf
Turn-on time 1.0
Storage time 3.0
Fall time
2
IC=2A; IB1=0.4A
I
=-0.8A;VCC=200V
B2
μs
μs
0.3
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3972 2SC3972A
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3972 2SC3972A
4
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