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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3968
DESCRIPTION
·Low Collector Saturation Voltage
·High Collector-Emitter Breakdown Voltage-
: V
·High Switching Speed
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(T
(BR)CEO
= 400V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 400 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 2 A
Collector Current-Peak 4 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150 ℃
20
W
2
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3968
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
f
C
sat
T
OB
sat
Collector-Emitter Sustaining Voltage IC= 1.0A ; IB1= 0.1A, L= 1mH 400 V
Collector-Base Breakdown Voltage IC= 50μA; IE= 0 400 V
Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 400 V
Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V
)
Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V
)
Collector Cutoff Current VCB= 400V; IE= 0 10 μA
Emitter Cutoff Current VEB= 7V; IC= 0 10 μA
DC Current Gain IC= 0.1A ; VCE= 5V 25 50
Current-Gain—Bandwidth Product IE= -0.1A ; VCE= 10V 10 MHz
Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 30 pF
Switching times
t
on
t
stg
t
f
Turn-on Time 1.0 μs
= 0.8A ; IB1= -IB2= 0.08A;
I
Storage Time 2.5 μs
Fall Time
C
= 250Ω;VCC≈ 200V
R
L
1.0 μs
isc Website：www.iscsemi.cn
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