Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3947
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal output and power
switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 8 A
IB Base current 2 A
Collector-base voltage Open emitter 850 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 7 V
T
PC Collector dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
70 W
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3947
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=2.5A ; VCE=5V 10 30
fT Transition frequency IC=0.5A ; VCE=10V 20 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 500 V
Collector-base breakdown voltage IC=1mA ;IE=0 850 V
Emitter-base breakdown voltage IE=1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 1.0 V
Base-emitter saturation voltage IC=2.5A ;IB=0.5A 1.5 V
V
=800V; IE=0
Collector cut-off current
Emitter cut-off current VEB=6V ;IC=0 0.1 mA
CE
TC=100℃
0.1
1.0
mA
Switching times
tr Rise time 0.5 μs
t
Storage time 3.0 μs
stg
tf Fall time
2
IC=2.5A ; VCC=250V
=0.5A; IB2=-1A
I
B1
0.3 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3947
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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