Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3910
DESCRIPTION
·High Speed Switching
·High Collector-Base Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
APPLICATIONS
·Designed for high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 800V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 15 A
Collector Current-Peak 30 A
B Base Current-Continuous 5 A
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
150
W
3.5
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3910
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
Collector-Emitter Sustaining Voltage IC= 0.5A ;L= 25mH 500 V
Collector-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.0 V
Base-Emitter Saturation Voltage IC= 8.0A; IB= 1.6A 1.5 V
Collector Cutoff Current VCB= 800V ; IE= 0 100
Emitter Cutoff Current VEB= 7V; IC= 0 100
DC Current Gain IC= 0.1A ; VCE= 5V 15
DC Current Gain IC= 8A ; VCE= 5V 10
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;f= 0.5MHz 2 MHz
μA
μA
t
on
t
stg
t
f
Turn-on Time 1.0
Storage Time 3.0
Fall Time
IC= 8A ;IB1= 1.6A; IB2= -1.6A;
= 200V
V
CC
1.0
isc Website：www.iscsemi.cn
2
μs
μs
μs
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