Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886A
DESCRIPTION ·
·With TO-3P(H)IS package
·High voltage ,high speed
APPLICATIONS
·Horizontal deflection output for high
resolution display
·High speed switching regulator output
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
IB Base current 4 A
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
PC Collector power dissipation
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
=25℃
C
50 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V
Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V
Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V
Collector cut-off current VCB=1500V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=1A ; VCE=5V 8 15
fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz
COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF
ts
tf
Storage time 2.5 μs
Fall time
Resistive load
=6A ;IB1=-IB2=1.2A
I
CP
=33.3Ω
R
L
0.15 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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