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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display
·High speed switching regulator output
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 15 A
IB Base current 4 A
PT Total power dissipation
Collector-base voltage Open emitter 1400 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
℃)
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V
Collector-emitter saturation voltage IC=6A; IB=1.5A 5 V
Base-emitter saturation voltage IC=6A; IB=1.5A 5 V
Collector cut-off current VCB=1400V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 10
μA
DC current gain IC=1A ; VCE=5V 8 15
Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 150 pF
fT Transition frequency IE=0.1A ; VCE=10V 3 8 MHz
Switching times inductive load
ts Storage time 2.5 4.0
tf Fall time
I
=6A;IB1=1.2A
CP
f
=64kHz
H
LY=120μH;CY=7500pF
0.1 0.5
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3886
4
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