Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3885
DESCRIPTION
·High Breakdown Voltage : V
·High Switching Speed
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1400V (Min)
CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1400 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 7 A
Collector Current- Peak 14 A
B Base Current- Continuous 3.5 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
50 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3885
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
Switching Times , Resistive load
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 600 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V
Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 1A; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
Output Capacitance
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
μA
210 pF
t
stg
t
f
Storage Time 2.5
= 5A, IB1= 1A; IB2= -2A;
I
CP
R
= 40Ω
L
Fall Time
0.15
isc Website：www.iscsemi.cn
2
μs
μs
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