Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3874
DESCRIPTION
·With TO-3PL package
·High speed switching
·High V
·Wide area of safe operation
APPLICATIONS
·For high-speed switching applications
PINNING
CBO
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
ICM Collector current-peak 25 A
IB Base current 5 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 3.5
PC Collector power dissipation
T
=25℃ 150
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3874
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V;f=1MHz 20 MHz
Switching times
ton Turn-on time 0.7
Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V
Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V
Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V
Collector cut-off current VCB=500V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=10A ; VCE=5V 8
μA
μA
μs
t
Storage time 2.0
stg
tf Fall time
2
=10A; VCC=150V
I
C
I
=2A;IB2=-4A
B1
μs
0.3
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3874
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3874
4
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