Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3873
DESCRIPTION ·
·With TO-3PFa package
·High V
·High speed switching
·Good linearity of h
·Wide area of safe operation
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
CBO
FE
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
ICM Collector current-peak 22 A
IB Base current 5 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
TC=25℃ 100
W
Ta=25℃ 3
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3873
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 30 MHz
Switching times
ton Turn-on time 0.7
Collector-emitter breakdown voltage IC=10mA;IB=0 400 V
Collector-emitter saturation voltage IC=7A ;IB=1.4A 1.0 V
Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V
Collector cut-off current VCB=500V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=7A ; VCE=5V 8
μA
μA
μs
t
Storage time 2.0
stg
tf Fall time
2
=7A; VCC=150V
I
C
I
=1.4A;IB2=-2.8A
B1
μs
0.3
μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3873
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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