Page 1
Po wer Transistors
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Wide area of safe operation (ASO)
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
500
500
400
7
20
10
5
70
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
21.0±0.516.2±0.5
3.5 0.715.0±0.2
12.5
Solder Dip
15.0±0.3
11.0±0.2
φ3.2±0.1
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
321
TOP–3 Full Pack Package(a)
Unit: mm
5.0±0.2
3.2
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 5A
IC = 5A, IB = 1A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 1A, IB2 = –2A,
VCC = 150V
min
400
15
8
typ25max
100
100
1
1.5
0.7
2
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC3872
PC—Ta IC—V
80
)
(1)
70
W
(
C
60
50
40
30
20
(2)
10
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=3.0W)
(P
C
V
BE(sat)—IC
25˚C
100˚C
TC=–25˚C
Collector current IC (A
IC/IB=5
)
CE
10
8
)
A
(
C
6
4
Collector current I
2
0
012108264
)
Collector to emitter voltage VCE (V
IB=1000mA
hFE—I
10000
3000
FE
1000
300
100
TC=100˚C
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
25˚C
–25˚C
Collector current IC (A
600mA
C
TC=25˚C
500mA
450mA
400mA
350mA
300mA
250mA
200mA
150mA
100mA
50mA
V
=5V
CE
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
1
0.01 0.1 1 100.03 0.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=10V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=5
–25˚C
)
=25˚C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
t
f
0.1
t
on
Switching time t
0.03
0.01
082647153
Collector current IC (A
t
stg
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
=–IB2)
(2I
B1
V
=200V
CC
=25˚C
T
C
Area of safe operation (ASO)
100
30
I
CP
I
)
C
10
A
(
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
10ms
Non repetitive pulse
=25˚C
T
C
t=0.5ms
DC
1ms
)
Page 3
Po wer Transistors 2SC3872
Area of safe operation, reverse bias ASO
40
35
)
30
A
(
C
25
I
CP
20
15
10
Collector current I
5
0
0 800200 600400 700100 500300
Collector to emitter voltage VCE (V
3
10
)
˚C/W
2
(
10
(t)
th
10
L
=200µH
coil
I
C/IB
(2I
B1
=25˚C
T
C
=10V × 0.3A (3W) and without heat sink
(1) P
T
=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(2) P
T
=5
=–IB2)
Reverse bias ASO measuring circuit
L coil
T.U.T
I
I
B1
V
in
t
W
–I
B2
)
R
—t
th(t)
(1)
(2)
C
V
CC
V
clamp
1
Thermal resistance R
–1
10
–4
10
–3
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
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