Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3870
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For high speed switching applications
PINNING
PIN DESCRIPTION
·
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 7 A
ICM Collector current (pulse) 15 A
IB Base current (DC) 3 A
PC Collector power dissipation
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃
=25℃
T
C
2
W
40
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3870
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Switching times
Collector-emitter sustaining voltage IC=10mA ;IB=0 400 V
CEO(SUS)
V
Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
BEsat
I
Collector cut-off current VCB=500V; IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 μA
EBO
h
DC current gain IC=0.1A ; VCE=5V 15
FE-1
h
DC current gain IC=3A ; VCE=5V 8
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 30 MHz
ton
ts
Turn-on time 0.7 μs
I
=3A ;IB=0.6A;IB2=-1.2A
Storage time 2.0 μs
C
V
CC
=150V
tf
Fall time
2
0..3 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3870
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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