Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3850
DESCRIPTION
·With TO-3PN package
·Good linearity of h
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
FE
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
ICM Collector current-peak 30 A
IB Base current 6 A
Collector-base voltage Open emitter 500 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 7 V
℃)
Ta=25℃ 2.5
PC Collector power dissipation
T
=25℃ 125
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3850
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=1A ; VCE=10V 15 MHz
Switching times
ton Turn-on time 1.0
ts Storage time 2.5
tf Fall time
Collector-emitter sustaining voltage IC=0.5A ;L=25mH 400 V
Collector-emitter saturation voltage IC=10A ;IB=2A 1.0 V
Base-emitter saturation voltage IC=10A ;IB=2A 1.5 V
Collector cut-off current VCB=500V ;IE=0 100
Emitter cut-off current VEB=7V; IC=0 100
DC current gain IC=2A ; VCE=5V 15
DC current gain IC=10A ; VCE=5V 10
=10A
I
C
I
=-IB2=2A
B1
=125V
V
CC
1.0
μA
μA
μs
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3850
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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