Page 1
2SC3838
High-Frequency Amplifier Transistor
NPN Silicon
P b
Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
T =25°C
A
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
(Ta=25ºC)
(1)
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol Value
P
D
R
θJA
T
Tstg
J,
Value
11
20
3.0
50
150
625
-55 to +150
3
1
2
SOT-23
Unit
V
V
V
mA
Unit
mW
°C/W
°C
Device Marking
2SC3838=AD
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min
Collector-Emitter Breakdown Voltage(I =1mA, I =0)
Collector-Base Breakdown Voltage(I =10µA, I =0)
Emitter-Base Breakdown Voltage(I =10µA, I =0)
Collector Cufo Current(V =10V, I =0)
Emitter Cufo Current(V =2V, I =0)
I
I
I
1. FR-5=1.0 0.75 0.062 in
I
CB E
EB
C B
C
E
C
E
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
11
20
3.0
Max
-
-
-
-
-
0.5
0.5
Unit
V
V
V
µA
µA
WEITRON
http://www.weitron.com.tw
1/3
Rev.A 23-Jan-09
Page 2
2SC3838
ELECTRICAL CHARACTERISTICS (T
Characteristics
ON CHARACTERISTICS
DC Current Gain
VCE=10V ,IC= 5mA
Transition Frequency
VCE=10V ,IC= 10mA, f=500MHz
Collector-Emitter Saturation Voltage
IC=-10 mA, IB=5mA
Noise Factor
VCE=6V, IC=2mA, f=500MHz
=25°C unless otherwise noted) (Countinued)
A
Symbol UnitMin Max
h
FE
f
V
CE(sat)
F
T
27
1.4
-
TYP
-
-
-
- dB
270
-
0.5
4.0-
-
GHz
V
CLASSIFICATION OF h
Rank
Range
FE
56-120
PN
82-180
WEITRON
http://www.weitron.com.tw
2/3 Rev.A 25-Sep-08
Page 3
2SC3838
SOT-23 Package Outline Dimensions
A
TOP VI EW
D
E
G
H
B
C
K
L
J
Unit:mm
Dim
A
B
C
D
E
G
H
J
K
L
M
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
http://www.weitron.com.tw
3/3 23-Apr-07
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