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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3821
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
I
P
T
T
C
B
C
J
stg
Collector-Base Voltage 450 V
Collector-Emitter Voltage 400 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 7 V
Collector Current-Continuous 5 A
B Base Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
40 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 3.0 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3821
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V
Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 400 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V
Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
Collector Cutoff Current VCB= 450V ; IE=0 1.0 mA
Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA
DC Current Gain IC= 2A; VCE= 5V 10
Switching times
t
on
t
stg
Turn-on Time 1.0
I
= 4A , IB1= -IB2= 0.8A;
C
= 20Ω;PW=20μs
Storage Time 2.5
R
L
μs
μs
Duty Cycle≤2%
μs
t
f
Fall Time
1.0
isc Website：www.iscsemi.cn
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