Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3798
DESCRIPTION
·Collector-Base Breakdown Voltage : V
(BR)CBO
·Low Collector Saturation Voltage
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T
·
= 800V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
CBO
CES
CEO
EBO
I
C
CM
I
B
P
C
Collector-Base Voltage 800 V
Collector-Emitter Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 3 A
Collector Power Dissipation
@Ta=25℃
Collector Power Dissipation
@TC=25℃
3
W
70
T
T
stg
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3798
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching Times
t
on
Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 500 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V
)
sat
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V
)
sat
Collector Cutoff Current VCB= 800V; IE= 0 100 μA
Emitter Cutoff Current VEB= 5V; IC= 0 100 μA
DC Current Gain IC= 0.1A; VCE= 5V 15
DC Current Gain IC= 3A; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz 8 MHz
Turn-on Time 1.0 μs
t
s
t
f
Storage Time 3.0 μs
Fall Time
isc Website：www.iscsemi.cn
= 3A; IB1= -IB2= 0.6A;
I
C
= 200V
V
CC
1.0 μs
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