Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795B
DESCRIPTION
·With TO-220F package
·High breakdown voltage
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·For high voltalge ,high-speed
switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
IB Base current 3 A
PC Collector dissipation
Collector-base voltage Open emitter 1300 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 8 V
℃)
Ta=25℃
TC=25℃
2
W
50
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 8 MHz
Collector-emitter sustaining voltage IC=0.2A , L=25mH 600 V
Collector-emitt er saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector cut-off current VCB=800V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
DC current gain IC=0.1A ; VCE=5V 15
DC current gain IC=3A ; VCE=5V 8
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3795B
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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