Datasheet 2SC3795A, 2SC3795 Datasheet (Panasonic)

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5 Solder Dip

4.0

0.5

+0.2 –0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5 213

2.7±0.2

4.2±0.2

φ3.1±0.1

Po wer Transistors

2SC3795, 2SC3795A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Features

■

●

High-speed switching

●

High collector to base voltage V

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature

Electrical Characteristics (T

■

Collector cutoff current Emitter cutoff current Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency

Turn-on time

Storage time

Fall time

*

V

CEO(sus)

2SC3795 2SC3795A 2SC3795 2SC3795A

TC=25°C Ta=25°C

Parameter

T est circuit

2SC3795 2SC3795A

50/60Hz

mercury relay

120Ω

6V

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

Symbol

I

CBO

I

EBO

V

CEO(sus)

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

–55 to +150

=25˚C)

C

*

1Ω

CE(sat)

800 900 800 900 500

8

10

5 3

40

2

150

VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz

IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 200V

L 25mH

15V

Unit

V

V V A A A

W

˚C ˚C

Conditions

X

Y

G

TO–220 Full Pack Package(a)

min

typ8max

500

15

8

100 100 100

1

1.5

1

1.2 3 1

1.2

Unit: mm

1:Base 2:Collector 3:Emitter

Unit

µA

V

V V

MHz

µs

1

Po wer Transistors 2SC3795, 2SC3795A

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

100

) V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) T

=Ta

C

(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2) (3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=5

25˚C

TC=–25˚C

100˚C

Collector current IC (A

)

CE

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

0108264

)

Collector to emitter voltage VCE (V

IB=1200mA

1000mA

800mA

hFE—I

1000

300

FE

100

30

10

3

1

Forward current transfer ratio h

0.3

0.1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

–25˚C

Collector current IC (A

600mA

400mA

C

300mA

200mA

150mA

TC=25˚C

100mA

50mA

20mA

VCE=5V

25˚C

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

) MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

Collector current IC (A

fT—I

C

VCE=10V f=1MHz T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=5

25˚C

–25˚C

)

=25˚C

)

Cob—V

10000

) pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0 f=1MHz

=25˚C

T

C

)

ton, t

100

30

)

µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01 082647153

Collector current IC (A

t

on

, tf — I

stg

t

stg

C

Pulsed tw=1ms Duty cycle=1%

=5

I

C/IB

=–IB2)

(I

B1

V

=200V

CC

=25˚C

T

C

t

f

Area of safe operation (ASO)

10

I

CP

I

C

3

) A

(

1

C

0.3

0.1

0.03

Collector current I

0.01

0.003 1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse T

=25˚C

C

t=0.5ms

1ms

DC

2SC3795/2SC3795A

)

Po wer Transistors 2SC3795, 2SC3795A

Area of safe operation, reverse bias ASO

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

0 800200 600400 700100 500300

Collector to emitter voltage VCE (V

1000

) ˚C/W

(

100

(t)

th

10

L

coil

I

C/IB

(I

B1

=100˚C

T

C

2SC3795

=10V × 0.2A (2W) and without heat sink

(1) P

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

=50µH =5

=–IB2)

2SC3795A

)

R

th(t)

Reverse bias ASO measuring circuit

V

in

t

W

—t

(1)

(2)

I

B1

–I

T.U.T

B2

L coil

I

C

V

CC

V

clamp

1

Thermal resistance R

0.1

–4

10

–3

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10

3