Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3762
DESCRIPTION
·With TO-3PML package
·High speed switching
·High current capability
APPLICATIONS
·For use in high speed and power
switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
PC Collector dissipation TC=25℃ 65 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3762
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=5A ; VCE=5V 30 120
Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V
Collector-base breakdown voltage IC=1mA ;IE=0 150 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V
Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V
Collector cut-off current VCB=100V ;IE=0 10
Emitter cut-off current VEB=4V; IC=0 10
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3762
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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