Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3756
DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
PC Collector dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Ta=25℃ 3.0
W
T
=25℃ 60
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3756
CHARACTERISTICS
Tj=25℃ unless oth erwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1A ;IB=0 800 V
Collector-emitter saturation voltage IC=4A ;IB=1A 5.0 V
Base-emitter saturation voltage IC=4A ;IB=1A 1.5 V
Collector cut-off current VCB=800V ;IE=0 10 μA
Collector cut-off current VCE=1500V; RBE=0 1.0 mA
Emitter cut-off current VEB=4V ;IC=0 10 μA
DC current gain IC=1A ; VCE=5V 8 36
DC current gain IC=4A ; VCE=5V 4
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3756
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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