Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3737
DESCRIPTION
·High Collector-Base Breakdown Voltage : V
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(T
(BR)CBO
= 800V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 800 V
Emitter-Base voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 8 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
100
W
3
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3737
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching times
t
on
t
stg
t
f
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 2.0 V
Collector Cutoff Current VCB= 1000V; IE= 0 100
Emitter Cutoff Current VEB= 6V; IC= 0 100
DC Current Gain IC= 2A; VCE= 5V 6 20
Turn-On Time 1.0
Storage Time 3.5
Fall Time
= 2A; IB1= 0.4A, IB2= -0.8A;
I
C
= 250V
V
CC
μA
μA
μs
μs
0.3
μs
isc Website：www.iscsemi.cn
2
Loading...