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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3729
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Wide Area of Safe Operation
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 800V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base voltage 6 V
Collector Current-Continuous 5 A
Collector Current-Peak 16 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
50 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3729
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
(BR)CEO
(BR)EBO
V
CE
V
BE
I
CES
h
FE
(sat)
(sat)
Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 800 V
Emitter-Base Breakdown voltage IE= 10mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V
Collector Cutoff Current VCE= 1500V; RBE= 0 0.5 mA
DC Current Gain IC= 1A; VCE= 5V 8
isc Website：www.iscsemi.cn
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