Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3725
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 450 V
Collector-emitter voltage Open base 400 V
Emitter-base voltage Open collector 10 V
T
=25℃
C
80 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 1.56
th j-C
℃
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3725
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=6A ; VCE=5V 10
Switching times
ton
Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V
Collector-base breakdown voltage IC=1mA ; IE=0 450 V
Emitter-base breakdown voltage IE=1mA ; IC=0 10 V
Collector-emitter saturation voltage IC=6A ;IB=1.2A 0.8 V
Base-emitter saturation voltage IC=6A ;IB=1.2A 1.2 V
Collector cut-off current VCB=450V; IE=0 100 μA
Emitter cut-off current VEB=10V; IC=0 100 μA
Turn-on time 1.0 μs
ts
tf
Storage time 2.5 μs
Fall time
2
=6A; IB1=2A
I
C
=-4A; RL=15Ω
I
B2
0.5 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3725
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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