Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3719
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
(BR)CEO
= 800V (Min)
=25℃)
a
: V
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
I
B
P
C
T
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 8 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 175
j
150 W
℃
T
stg
Storage Temperature Range -65~175
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3719
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
h
FE
I
CBO
I
EBO
Switching Times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 2.0 V
DC Current Gain IC= 2A; VCE= 5V 6 20
Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA
Turn-On Time 1.0
Storage Time 3.5
I
= 2A; IB1= 0.4A; IB2= -0.8A;
C
= 250V
V
CC
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
0.3
μs
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