Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3710
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SA1452
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IB Base current 2 A
PC Collector dissipation
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3710
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=10V, f=1MHz 220 pF
fT Transition frequency IC=1A ; VCE=5V 80 MHz
Switching times
ton Turn-on time 0.2 μs
Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V
Collector-emitter saturation voltage IC=6A;IB=0.3A 0.2 0.4 V
Base-emitter saturation voltage IC=6A;IB=0.3A 0.9 1.2 V
Collector cut-off current VCB=80V; IE=0 10 μA
Emitter cut-off current VEB=6V; IC=0 10 μA
DC current gain IC=1A ; VCE=1V 70 240
DC current gain IC=6A ; VCE=1V 40
ts Storage time 1.0 μs
tf Fall time
h
Classifications
FE-1
O Y
70-140 120-240
2
IB1=-IB2=0.3A
≈30V ,RL=5Ω
V
CC
0.2 μs
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3710
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3710
4
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