Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3709
DESCRIPTION
·Low Collector Saturation Voltage : V
CE(sat)
·Good Linearity of h
·High Switching Speed
·Complement to Type 2SA1451
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.4V(Max)@IC= 6A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
I
B
C
T
J
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 12 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
30 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3709
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 50mA ; IB= 0
C
50 V
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Switching Times
t
on
Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 0.4 V
Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 1.2 V
Collector Cutoff Current VCB= 60V; IE= 0 10
Emitter Cutoff Current VEB= 6V; IC= 0 10
DC Current Gain IC= 1A; VCE= 1V 70 240
DC Current Gain IC= 6A; VCE= 1V 40
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 90 MHz
Turn-on Time 0.2
= 0; VCB= 10V; f
I
E
= 1MHz
test
μA
μA
180 pF
μs
= -IB2= 0.3A, RL= 5Ω;
I
B1
VCC≈ 30V,
0.2
h
t
stg
t
f
FE-1
Storage Time 1.0
Fall Time
Classifications
O Y
70-140 120-240
isc Website：www.iscsemi.cn
2
μs
μs
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